Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium I: Self-Organization in Semiconductors-Fundamentals and Applications, Strasbourg, France, June 4-8th 2001DÖHLER, Gottfried H.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, issn 0921-5107, 208 p.Conference Proceedings

Anisotropic surface structure in ordered strained InGaPHASENÖHRL, S; KUDELA, R; NOVAK, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 134-138, issn 0921-5107Conference Paper

Control of morphological transitions during heteroepitaxial island growth by reflection high-energy electron diffractionCIMALLA, V; ZEKENTES, K; VOUROUTZIS, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 186-190, issn 0921-5107Conference Paper

Growth and magnetic properties of (Ga, Mn)As as digital ferromagnetic heterostructuresKAWAKAMI, R. K; JOHNSTON-HALPERIN, E; CHEN, L. F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 209-212, issn 0921-5107Conference Paper

Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)REUTER, D; SCHAFMEISTER, P; KOCH, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 230-233, issn 0921-5107Conference Paper

Electronic structure of InAs self-assembled quantum dotsSCHMIDT, K. H; BOCK, C; KUNZE, U et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 238-242, issn 0921-5107Conference Paper

Redistribution of localised excitons in CdSe/ZnSe quantum dot structuresSTRASSBURG, M; DWORZAK, M; HEITZ, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 302-306, issn 0921-5107Conference Paper

Self-organised growth of silicon structures on silicon during oxide desorptionPALERMO, V; JONES, D.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 220-224, issn 0921-5107Conference Paper

Self-organization processes in semiconductor under photo-induced Gunn effectGORLEY, P. M; HORLEY, P. P; GONZALEZ-HERNANDEZ, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 286-291, issn 0921-5107Conference Paper

Self-organized quantum disks for a two-state systemTEMMYO, J; KAMADA, H; KURAMOCHI, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 153-157, issn 0921-5107Conference Paper

Self-organized technology of anisotropic etching of semiconductors for optoelectronics applicationDMITRUK, N. L; BORKOVSKAYA, O. Yu; MAYEVA, O. I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 277-281, issn 0921-5107Conference Paper

Optical properties of self-assembled lateral superlattices in AlInAs epitaxial layers and AlAs/InAs short-period superlatticesFRANCOEUR, S; NORMAN, A. G; HANNA, M. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 118-124, issn 0921-5107Conference Paper

Scanning tunneling miscroscopy study of InAs islands grown on GaAs(001) substratesSUEKANE, Osamu; HASEGAWA, Shigehiko; TAKATA, Masahiro et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 158-163, issn 0921-5107Conference Paper

Temperature and excitation dependence of the luminescence spectra of InAs quantum dotsHJIRI, M; HASSEN, F; MAAREF, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 255-258, issn 0921-5107Conference Paper

Effect of strain and ordering on the band-gap energy of InGaPNOVAK, J; HASENÖHRL, S; KUDELA, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 139-142, issn 0921-5107Conference Paper

Optical and electrical spectroscopy of defects in low temperature grown GaAsSTEEN, C; KIESEL, P; TAUTZ, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 191-194, issn 0921-5107Conference Paper

Morphological transformation of In_yGa_1-yAs islands, fabricated by Stranski-Krastanov growthLORKE, A; BLOSSEY, R; GARCIA, J. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 225-229, issn 0921-5107Conference Paper

Optical properties of InAs/Al_yGa_1-yAs/GaAs quantum dot structuresALTIERI, P; SANGUINETTI, S; GURIOLI, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 234-237, issn 0921-5107Conference Paper

Evolution of the intermixing process in Ge/Si(111) self-assembled islandsMOTTA, N; ROSEI, F; SGARLATA, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 264-268, issn 0921-5107Conference Paper

Lasers with δ InAs layers in GaAsOSWALD, J; HULICIUS, E; PANGRAC, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 312-316, issn 0921-5107Conference Paper

STM topographic and barrier imaging of self-assembled InAs/GaAs dotsSELCI, Stefano; LATINI, Gianluca; RIGHINI, Marcofabio et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 168-172, issn 0921-5107Conference Paper

Site-controlled self-organization of InAs quantum dotsKOHMOTO, Shigeru; NAKAMURA, Hitoshi; ISHIKAWA, Tomonori et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 292-297, issn 0921-5107Conference Paper

Stacked layers of InAs self-assembled quantum dotsKHORENKO, V; MALZER, S; PLAGWITZ, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 243-246, issn 0921-5107Conference Paper

Interband transitions in [001]-(GaP)₁(InP)_m superlatticesSCHUBERT, M; SCHMIDT, H; SIK, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 125-128, issn 0921-5107Conference Paper

Electric field-induced redistribution of free carriers at isotype (In, Ga)P/GaAs interfacesKRISPIN, P; KNAUER, A; GRAMLICH, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 129-133, issn 0921-5107Conference Paper